Swedish photonics and wireless technology company Sivers Semiconductors AB (STO:SIVE) announced on Thursday a programme with SemiNex Corporation, a developer of high-power indium phosphide (InP) laser diodes, distributed-feedback (DFB) lasers, semiconductor optical amplifiers (SOAs), and external cavity lasers, to develop next-generation InP light sources for AI data centre interconnects.

Valued at approximately USD3.4m, the programme targets high-power external laser sources for co-packaged optics, high-channel-count DFB arrays for wavelength-multiplexed links, and SOA gain stages.

The companies said the technology is aimed at supporting emerging scale-up and scale-out architectures as optical systems move from the faceplate into the package. The programme focuses on power per wavelength, wall-plug efficiency, and thermal stability as factors determining the scalability of these architectures.

Customer sampling and early production ramps are targeted for the second half of 2027.