Polar Semiconductor partners with Renesas to manufacture GaN-on-Si devices in the US
Polar Semiconductor, a US-owned merchant foundry specialising in sensor, power and high-voltage semiconductors, on Wednesday announced a licensing agreement with advanced semiconductor solutions provider Renesas Electronics Corporation (TSE:6723) to commercialise Gallium Nitride on Silicon (GaN-on-Si) D-Mode technology on 200mm wafers.
Under the agreement, Polar will manufacture 650V class GaN-on-Si power devices for Renesas and other customers at its expanded high-volume facility in Minnesota. The site is equipped with advanced automation and meets automotive-grade quality standards.
The partnership enhances the domestic supply chain for advanced semiconductors and improves access to dual-use GaN technology for US customers. It targets high-growth applications across the automotive, data centre, industrial, consumer and aerospace & defence sectors.
By scaling to 200mm wafer fabrication, the collaboration aims to reduce production costs and accelerate market adoption of GaN devices. Renesas contributes proven semiconductor IP, while Polar brings domestic manufacturing expertise.
The alliance supports strategic national interests and strengthens the competitiveness of US-based semiconductor manufacturing.
Published in
Worldwide Computer Products News
on Wednesday, 16 April 2025
Copyright (C) 2025, M2 Communications Ltd.
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